TC3977 pre2_20050418 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 p 1 / 1 3 w packaged single-bias phemt gaas power fets features ? 3w typical output power ? 12db typical linear power gain at 2.45ghz ? high linearity: ip3 = 45 dbm typical ? high power added efficiency: nominal pae of 35% ? breakdown voltage: bv dgo 18v ? wg = 7.5 mm ? 100 % dc tested ? suitable for high reliability application description the TC3977 is a single-bias cu-based ceramic packaged device with tc1706n phemt gaas fets, which is designed to provide the single power supply. the cu-based ceramic package provides excellent thermal conductivity for the gaas fet. the device is suitable for oscillator and power amplifiers in a wide range of commercial application. all devices are 100% dc tested to assure consistent quality. electrical specifications (@ 2.45 ghz) symbol conditions min typ max unit p 1db output power at 1db gain compression point v ds = 10 v 34.5 35.5 dbm g l linear power gain v ds = 10 v 12 db ip3 intercept point of the 3 rd -order intermodulation v ds = 10 v, *p scl = 24 dbm 45 dbm pae power added efficiency at 1db compression power 35 % i ds drain-source current at v ds = 10 v 900 ma bv dgo drain-gate breakdown voltage at i dgo = 3.75ma 18 22 volts r th thermal resistance 5.3 c/w note: *p scl : output power of single carrier level. photo enlargement preliminary
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